 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| EMH11 / UMH11N / IMH11A Transistors General purpose (dual digital transistors) EMH11 / UMH11N / IMH11A Features 1) Two DTC114E chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. External dimensions (Units : mm) EMH11 0.22 (4) (5) (6) (3) (2) 1.2 1.6 (1) 0.13 Each lead has same dimensions Abbreviated symbol : H11 ROHM : EMT6 1.3 0.65 0.8 1.1 0.95 0.95 1.9 2.9 0.7 0.9 0.2 (6) 1.25 0.15 The following characteristics apply to both DTr1 and DTr2. 2.1 0.1Min. Equivalent circuit EMH11 / UMH11N (3) (2) (1) R1 R2 DTr1 DTr2 R2 R1 (4) (5) R1=10k R2=10k DTr2 (6) 0to0.1 Each lead has same dimensions IMH11A (4) (5) (6) R1 R2 DTr1 ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : H11 IMH11A 0.3 (1) (6) R2 R1 (3) (2) R1=10k R2=10k (1) (4) (5) 1.6 2.8 0.15 0.3to0.6 Packaging specifications Package Code Type EMH11 UMH11N IMH11A - - - Basic ordering unit (pieces) T2R 8000 Taping TN 3000 - T110 3000 - - 0to0.1 Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol : H11 (3) (2) (1) 2.0 (5) (2) Structure Epitaxial planar type NPN silicon transistor (Built-in resistor type) (4) 0.65 UMH11N (3) 0.5 0.5 0.5 1.0 1.6 EMH11 / UMH11N / IMH11A Transistors Absolute maximum ratings (Ta=25C) Parameter Supply voltage Input voltage Output current Collector current Power dissipation EMH11,UMH11N IMH11A Tj Symbol VCC VIN IO IC (Max.) Limits 50 40 -10 50 100 150 (TOTAL) 300 (TOTAL) 150 -55~+150 Unit V V mA mA mW C C Pd 1 2 Junction temperature Storage temperature Tstg 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. Electrical characteristics (Ta=25C) Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio Symbol VI (off) VI (on) VO (on) II IO (off) GI fT R1 R2/R1 Min. - 3 - - - 30 - 7 0.8 Typ. - - 0.1 - - - 250 10 1 Max. 0.5 - 0.3 0.88 0.5 - - 13 1.2 Unit V V mA A - MHz k - Conditions VCC=5V, IO=100A VO=0.3V, IO=10mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA VCE=10mA, IE=-5mA, f=100MHz - - Transition frequency of the device Electrical characteristic curves 100 50 VO=0.3V OUTPUT CURRENT : Io (A) 10m 5m 2m VCC=5V 1k 500 VO=5V Ta=100C 25C -40C INPUT VOLTAGE : VI (on) (V) 20 10 5 2 1 500m 200m 100m 100 200 DC CURRENT GAIN : GI 1m 500 200 100 50 20 10 5 2 1 Ta=100C 25C -40C 200 100 50 20 10 5 2 1 100 200 Ta=-40C 25C 100C 500 1m 2m 5m 10m 20m 50m 100m 0 0.5 1 1.5 2 2.5 3 500 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltage (OFF characteristics) Fig.3 DC current gain vs. output current EMH11 / UMH11N / IMH11A Transistors 1 500m lO/lI=20 Ta=100C 25C -40C OUTPUT VOLTAGE : VO (on) (V) 200m 100m 50m 20m 10m 5m 2m 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current |
Price & Availability of EMH11
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |